Новые центры рекомбинации в слоях КРТ МЛЭ на подложках (013) GaAs

A large inhomogeneity of the minority lifetime from 1 to 10 µs at 77 K over area is observed in some experiments when high-quality HgCdTe layers electronic type conductivity are grown on GaAs substrates with a diameter 76.2 mm (013) orientation by method molecular beam epitaxy. As rule, such lifetimes determined carrier recombination Shockley-Hall-Read (SHR) centers. Modern studies and ideas about nature SHR centers do not allow us explain results. The measurements second harmonic generation showed existence quasi-periodic change signal minima azimuthal dependence, which associated appearance misoriented microregions crystal structure. amplitude decreases increasing completely disappears for regions higher values. Similar dependences during etching layers, indicates bulk. Thus, structure have significant effect new recombination.